BSP300 E6327

BSP300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 Pin 2 G D Type VDS ID RDS(on) Package Marking BSP300 800 V 0.19 A 20 Ω PG-SOT223 BSP300 Type BSP300 RoHS compliant Yes Pin 3 Pin 4 S D Tape and Reel Information Packaging L6327 Dry Maximum Ratings Parameter Symbol Continuous drain current ID TA = 25 °C Values Unit A 0.19 DC drain current, pulsed IDpuls TA = 25 °C 0.76 Avalanche energy, single pulse mJ E AS ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C 36 Gate source voltage V GS Power dissipation P tot TA = 25 °C V W 1.8 ESD Class JESD22-A114-HBM Rev 2.1 ± 20 Class 1a Page 1 2008-03-26 BSP300 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 Thermal resistance, junction-soldering point 1) RthJS ≤ 14 DIN humidity category, DIN 40 040 Unit °C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 800 - - 2 3 4 V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 800 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 800 V, V GS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 0.19 A Rev 2.1 nA IGSS - Page 2 15 20 2008-03-26 BSP300 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 0.19 A Input capacitance 0.06 pF - 170 230 - 20 30 - 10 15 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 0.27 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω Rise time - 7 11 - 16 24 - 27 36 - 21 28 tr V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω Rev 2.1 Page 3 2008-03-26 BSP300 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TA = 25 °C Inverse diode direct current,pulsed - - 0.76 V 1 1.4 ns trr - 95 µC Qrr V R = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Rev 2.1 0.19 - V R = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 0.38 A, Tj = 25 °C Reverse recovery time ISM TA = 25 °C Inverse diode forward voltage A IS - Page 4 0.25 - 2008-03-26 BSP300 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.20 W A 1.6 ID 0.16 1.4 0.14 1.2 0.12 1.0 0.10 0.8 0.08 0.6 0.06 0.4 0.04 0.2 0.02 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 0 120 °C 160 TA Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 t = 760.0µs p 1 ms /I D K/W 10 1 =V DS A 10 ms DS (on ) ID 10 0 R 10 -1 ZthJC 10 -1 D = 0.50 10 -2 0.20 10 -2 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 DC 10 -3 0 10 10 1 10 2 V 10 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 3 VDS Rev 2.1 tp Page 5 2008-03-26 BSP300 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.45 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C l 65 Ptot = 2W Ω kjihg f e A b 55 VGS [V] ID a d 0.35 0.30 c 0.25 0.20 0.15 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 b k 10.0 l 20.0 RDS (on) 50 45 40 35 30 c 25 20 15 0.10 10 a 0.05 k VGS [V] = 5 0.00 d e gh f ji a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0 0 4 8 12 16 V 24 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max I 1.0 0.50 A S 0.8 g D 0.40 fs 0.7 0.35 0.6 0.30 0.5 0.25 0.4 0.20 0.3 0.15 0.2 0.10 0.1 0.05 0.0 0.00 0 1 2 3 4 5 6 7 8 V V Rev 2.1 1.0 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 I GS D Page 1 6 2005-10-27 2008-03-26 BSP300 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.19 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 50 4.6 Ω V 98% 4.0 RDS (on) 40 VGS(th) 35 3.6 typ 3.2 30 2.8 2.4 98% 25 2% 2.0 20 typ 1.6 15 1.2 10 0.8 5 0.4 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 0 pF A IF C Ciss 10 2 10 -1 Coss 10 1 10 -2 C rss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 25 30 V V Rev 2.1 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD DS Page 7 2008-03-26 BSP300 Avalanche energy EAS = ƒ(Tj) parameter: ID = 0.8 A, VDD = 50 V RGS = 25 Ω, L = 105 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 38 960 mJ V 32 920 V(BR)DSS 900 EAS 28 880 24 860 20 840 16 820 12 800 780 8 760 4 740 0 20 720 40 60 80 100 120 °C 160 Tj Rev 2.1 -60 -20 20 60 100 °C 160 Tj Page 8 2008-03-26 BSP300 Rev 2.1 Page 9 2008-03-26